PART |
Description |
Maker |
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
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ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
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K4S281632K |
128Mb K-die SDRAM
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Samsung
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K4S281632K-UC_L50 K4S281632K-UC_L60 K4S280832K-UC_ |
128Mb K-die SDRAM Specification
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Samsung semiconductor
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K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4 |
128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
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Samsung Electronic Samsung semiconductor
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KM48L16031BT-GLZ_Y_0 KM44L32031BT-GLZ_Y_0 KM416L80 |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70 Enhanced Product 10-Bit Analog-To-Digital Converters W/Serial Control & 11 Analog Inputs 20-SOIC -40 to 125 Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70 Quad, Micropower, LinCMOS(TM) Comparator 14-CDIP -55 to 125 Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP 0 to 70 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC 0 to 70 Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70 128MB DDR SDRAM 8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-SOIC 128MB DDR SDRAM Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP 0 to 70 128MB DDR SDRAM DIODE ZENER SINGLE 500mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-123 3K/REEL 128MB DDR SDRAM 8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-SOIC 128MB DDR SDRAM DIODE ZENER DUAL COMMON-CATHODE 300mW 5.6Vz 5mA-Izt 0.0714 0.1uA-Ir 1 SOT-23 3K/REEL 128MB DDR SDRAM DIODE ZENER SINGLE 200mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-323 3K/REEL 128MB DDR SDRAM 8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-PDIP 128MB DDR SDRAM DIODE ZENER DUAL COMMON-CATHODE 300mW 51Vz 5mA-Izt 0.0588 0.1uA-Ir 38 SOT-23 3K/REEL 128MB DDR SDRAM 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC 128MB DDR SDRAM 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125 128MB DDR SDRAM DDR SDRAM Specification Version 1.0 DDR SDRAM的规范版.0 Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 128MB DDR SDRAM 128Mb DDR SDRAM 128MB DDR SDRAM 8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-PDIP 128MB DDR SDRAM 8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC 128MB DDR SDRAM DDR SDRAM Specification Version 1.0 128Mb DDR SDRAM
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. http://
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HY5DU28422ET |
128Mb DDR SDRAM
|
Hynix Semiconductor
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K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM 32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
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W3EG6432S262D3 W3EG6432S265D3 W3EG6432S265JD3 W3EG |
128MB - 16Mx64 DDR SDRAM UNBUFFERED
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WEDC[White Electronic Designs Corporation]
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K4H281638D |
128Mb DDR SDRAM Data Sheet
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Samsung Electronic
|
EBD12RB8ALFA-1A EBD12RB8ALFA-75 EBD12RB8ALFA-7A EB |
128MB Registered DDR SDRAM DIMM
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Elpida Memory
|
HYMD1166458 |
16Mx64|2.5V|H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
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HYMD116645AL8 HYMD116645A8 |
16Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
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